e-A深度非弹性散射中胶子辐射振幅的新计算方法

在e-A深度非弹性散射过程中, 喷注穿过冷核介质时, 多重散射诱导胶子辐射会导致对碎裂函数的修正及喷注的能量损失.前期研究中关于计算e-A深度非弹性散射中胶子辐射振幅的两种方法: 螺旋振幅近似和微扰QCD严格计算都异常繁杂. 本文发展了一种新的方法, 可以方便计算出多重散射导致胶子辐射的振幅, 得到的碎裂函数的修正以及能量损失与严格计算的结果一致.     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

p+209Bi核反应微观数据的理论计算

利用光学模型、激光模型、蒸发模型及扭曲波玻恩近似理论,对入射能量从阈能到300MeV,p+²⁰⁹Bi的中子反应截面、剩余核截面、出射粒子的多重数进行了理论计算及分析,并将计算结果与实验数据进行了比较.同时得到一组能量到50?0MeV与实验数据符合很好的光学势参数.     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。     

红外光谱对碱土金属二元羧酸盐结构的研究

研究了三十种二元羧酸金属盐的红外光谱，讨论了金属离子和二元酸的种类对二元酸盐配位结构的影响。发现Mg盐、Ba盐，Sr盐为螯合配位，Ca盐，Zn盐中同时存在螯合配位和桥式配位，二元酸的种类对羧酸盐配位结构没有影响。对羧酸盐在常温和熔融后的栩位方式和结构上的差异的研究结果表明，Mg盐，Ca盐与Sr盐，Ba盐在熔融后的结构变化不同。     

Entanglement system,Casimir energy and black hole

We investigate the connection between the entanglement system in Minkowski spacetime and the black hole using the scaling analysis. Here we show that the entanglement system satisfies the Bekenstein entropy bound. Even though the entropies of two systems are the same form, the entanglement energy is different from the black hole energy. Introducing the Casimir energy of the vacuum energy fluctuations rather than the entanglement energy, it shows a feature of the black hole energy. Hence the Casimir energy is more close to the black hole than the entanglement energy. Finally, we find that the entanglement system behaves like the black hole if the gravitational effects are included properly.     

Different effects of cerium ions doping on properties of anatase and rutile TiO2

Pure and Ce⁴⁺ doped anatase and rutile TiO₂ were prepared by hydrothermal methods and characterized by XRD, TEM, UV-vis diffusion spectroscopy, and XPS measurements. The photocatalytic reactivity of the catalysts was evaluated by the photodegradation of Rhodamine B (RB) under ultraviolet irradiation. The photocatalytic efficiency of the rutile sample doped with an appropriate amount of Ce⁴⁺ was enhanced while all Ce⁴⁺ doped anatase samples showed a much lower activity than pure anatase. The reasons were discussed     

未知相关噪声环境下宽带源波达方向估计的快速算法

提出一种未知相关噪声环境下带源波达方向估计的快速算法。该算法只对信号子空间进行变换,直接由传播算子构造聚焦矩阵,得到一种快速TCT聚焦矩阵。利用阵列相关矩阵的酉相似变换特性估计噪声相关矩阵,提高了未知相关噪声情况下宽带DOA估计的性能。该算法由线性运算求解聚焦矩阵和噪声相关矩阵,无需特征分解,运算量低,而且适用于未知相关噪声情况,具有重要的工程实用价值。